﻿<?xml version="1.0" encoding="utf-8"?><?xml-stylesheet type='text/xsl' href='file/RSS.xsl'?><rss version="2.0"><channel><title>Advances in Optoelectronic Materials</title><link>http://www.seipub.org/aom/RSS.aspx</link><language>en-US</language><item><title>Comparative Study on Structural and Electrical Properties of Se-Zn-In and Se-Zn-Te-In Chalcogenide Glasses</title><pubDate>2014-0</pubDate><description>&lt;p class="abstract"&gt;Comparative Study on Structural and Electrical Properties of Se-Zn-In and Se-Zn-Te-In Chalcogenide Glasses&lt;/p&gt;&lt;ul&gt;&lt;li&gt;Pages 1-9&lt;/li&gt;&lt;li&gt;Author  Abhay Kumar Sing&lt;/li&gt;&lt;li&gt;Abstract Chalcogenide glasses or amorphous semiconducting materials have would frequently used as memory devices. A comparative understanding concerning to electrical properties of recent developed materials Se-Zn-In and Se-Zn-Te-In could be helpful to outline their potential applications. Therefore it worth to described a relative variation in I-V characteristics, electrical conductivity and ln(I) vs V1/2 characteristics for the Se98-xZn2Inx (0 ≤ x ≤ 10) and Se93-xZn2Te5Inx (0 ≤ x ≤ 10)  chalcogenide glasses. Obtained outcome demonstrates the incorporation of fixed amount of Te with increasing In concentration as cost of Se affects the structural unit values and electrical properties. The electrical properties of the subjected materials have been obtained higher correspond to chemical thresholds structural units values.&lt;/li&gt;&lt;/ul&gt;</description><link>http://www.seipub.org/aom/PaperInfo.aspx?ID=6463</link><category>Advances in Optoelectronic Materials</category><guid isPermaLink="True">http://www.seipub.org/aom/PaperInfo.aspx?ID=6463</guid></item><item><title>Tran Blaha Modified Becke-Johnson Potential Band Structure Including Spin Orbit Interaction</title><pubDate>2014-0</pubDate><description>&lt;p class="abstract"&gt;Tran Blaha Modified Becke-Johnson Potential Band Structure Including Spin Orbit Interaction&lt;/p&gt;&lt;ul&gt;&lt;li&gt;Pages 10-17&lt;/li&gt;&lt;li&gt;Author  S. KumarSuman PandeyS. Auluc&lt;/li&gt;&lt;li&gt;Abstract We have used full potential linear augmented plane wave method within density functional theory to study  the electronic and optical properties of Cu-based chalcopyrite semiconductors CuXS2 (X=Al, Ga, In). Tran-Blaha modiﬁed Becke-Johnson (TB-mBJ) potential are used to ﬁnd out the suitability for the study of  optical  properties. We discuss the improvement in energy band gap determination using TB-mBJ compared to the standard generalized gradient approximation (GGA) and Engel Vosko’s generalized gradient approximation (EV-GGA) within density functional theory. The calculated crystal ﬁeld splitting energy decreases with increasing III- group cation’s atomic number i.e. Al→In. The magnitude of spin-orbit coupling energy remains almost same for all the  three  systems. The obtained dielectric functions  using TB-mBJ show good agreement with the available experimental data.&lt;/li&gt;&lt;/ul&gt;</description><link>http://www.seipub.org/aom/PaperInfo.aspx?ID=11656</link><category>Advances in Optoelectronic Materials</category><guid isPermaLink="True">http://www.seipub.org/aom/PaperInfo.aspx?ID=11656</guid></item></channel></rss>